Investigation of Changing Volt-Ampere Characteristics of AlGaInP Heterostructures with Multiple Quantum Wells under Ionizing Radiation

The results of research into degradation of volt-ampere characteristics of light emitting diodes produced on the base of AlGaInP heterostructures with multiple quantum wells are presented on the example of light emitting diodes (emission wavelengths 623 nm and 590 nm) under gamma quantum and fast neutron radiation in passive powering mode. The shifts of volt-ampere characteristics into the higher voltage range have been observed in conditions of increasing neutron fluence and radiation dose. The observed increase in the resistance of ohmic contacts is caused by the rising resistance of adjacent area, which in its turn results from the changing mobility of charge carriers. The latter varies with the growth of introduced defects under irradiation. Two different areas of current generation have been identified. A mechanism of current generation depends on injected charge carriers in the range of mid-level electron injection. Moreover, the range of high electron injection is distinguished by changing resistance of light emitting diode cores alongside with current generation conditioned by charge carrier injection

Main principles of developing exploitation models of semiconductor devices

The paper represents primary tasks, solutions of which allow to develop the exploitation modes of semiconductor devices taking into account complex and combined influence of ionizing irradiation and operation factors. The structure of the exploitation model of the semiconductor device is presented, which is based on radiation and reliability models. Furthermore, it was shown that the exploitation model should take into account complex and combine influence of various ionizing irradiation types and operation factors. The algorithm of developing the exploitation model of the semiconductor devices is proposed. The possibility of creating the radiation model of Schottky barrier diode, Schottky field-effect transistor and Gunn diode is shown based on the available experimental data. The basic exploitation model of IRLEDs based upon double AlGaAs heterostructures is represented. The practical application of the exploitation models will allow to output the electronic products with guaranteed operational properties

LEDs based upon AlGaInP heterostructures with multiple quantum wells: comparison of fast neutrons and gammaquanta irradiation

The paper presents the research results of watt and volt characteristics of LEDs based upon AlGaInP heterostructures with multiple quantum wells in the active region. The research is completed for LEDs (emission wavelengths 624 nm and 590 nm) under irradiation by fast neutron and gamma-quanta in passive powering mode. Watt-voltage characteristics in the average and high electron injection areas are described as a power function of the operating voltage. It has been revealed that the LEDs transition from average electron injection area to high electron injection area occurs by overcoming the transition area. It disappears as it get closer to the limit result of the irradiation LEDs that is low electron injection mode in the entire supply voltage range. It has been established that the gamma radiation facilitates initial defects restructuring only 42% compared to 100% when irradiation is performed by fast neutrons. Ratio between measured on the boundary between low and average electron injection areas current value and the contribution magnitude of the first stage LEDs emissive power reducing is established. It is allows to predict LEDs resistance to irradiation by fast neutrons and gamma rays

Stimulation of processes of self-propagating high temperature synthesis in system Ti+Al at low temperatures by influence of [gamma]-quanta

In the present work, the influence of the irradiation with gamma-quanta 60Со upon the structural and phase state of the components of the mechanically activated powder composition of Ti+Al is investigated. The phase composition, structural parameters, and crystallinity are examined by means of X-ray diffractometry. It is found out that the irradiation with gamma-quanta changes the structure of the mechanically activated powder composition. The higher irradiation dose, the higher the structure crystallinity of both components with no change in phase state. At the same time, the parameters of Ti and Al crystal lattices approach to the initial parameters observed before the mechanical activation. The irradiation with gammaquanta leads to decrease of internal stresses in the mechanically activated powder composition while nanocrystallinity of the structure remains unchanged. Using of powder compositions exposed to the irradiation with gamma-quanta for the SH-synthesis helps to increase speed of the reaction, decrease the peak firing temperature and improve homogeneity, as well as the main phase of the produced material is TiAl

LEDs based upon AlGaInP heterostructures with multiple quantum wells: comparison of fast neutrons and gammaquanta irradiation

The paper presents the research results of watt and volt characteristics of LEDs based upon AlGaInP heterostructures with multiple quantum wells in the active region. The research is completed for LEDs (emission wavelengths 624 nm and 590 nm) under irradiation by fast neutron and gamma-quanta in passive powering mode. Watt-voltage characteristics in the average and high electron injection areas are described as a power function of the operating voltage. It has been revealed that the LEDs transition from average electron injection area to high electron injection area occurs by overcoming the transition area. It disappears as it get closer to the limit result of the irradiation LEDs that is low electron injection mode in the entire supply voltage range. It has been established that the gamma radiation facilitates initial defects restructuring only 42% compared to 100% when irradiation is performed by fast neutrons. Ratio between measured on the boundary between low and average electron injection areas current value and the contribution magnitude of the first stage LEDs emissive power reducing is established. It is allows to predict LEDs resistance to irradiation by fast neutrons and gamma rays

Propagation of Magnetic Fields from Electrical Domestic Appliances

The article presents a research into propagation of magnetic fields from electrical domestic devices. A safe distance at which magnetic induction does not exceed the background level is determined for each type of devices. It is proved that there are two stages of increasing magnetic induction as the distance from the source increases. At the first stage magnetic induction rises and electromagnetic field is formed. At the second stage exponential decrease of magnetic field induction takes place. Mathematical regularities of propagation of magnetic field from electrical domestic devices are experimentally educed